Texas Instruments Releases Next-generation DDR Termination Regulator

(Product News, 11 Aug 2008)

Texas Instruments Inc. (TI) has launched a sink/source double data rate (DDR) termination regulator that supports all power management requirements for DDR, DDR2, DDR3 and DDR4 low-power memory termination. The easy-to-use regulator requires only 20µF of ceramic output capacitance, nearly 80 percent less capacitance than competitive solutions. Designers can use the device to achieve smaller and lower-cost DDR memory termination in modern, high-memory content electronics, including digital TVs, Set-Top boxes, VGA cards, telecom, datacom, notebook and desktop computers, and an increasingly wide range of consumer electronics.

The wide-bandwidth internal transconductance, Gm amplifier and integral dynamic voltage positioning enables ultra-fast transient response with minimal external output capacitance. In a typical application with a -1.5A to +1.5A load step, the output voltage variation is less than 25mV. TPS51200 is designed to work with bias voltage between 2.375 and 3.5V, which makes it very attractive in the systems where only 2.5V or 3.3V rail is available. Additionally, the device includes the S3 sleep-state control during suspend to RAM.

The TPS51200 can also be used as a general-purpose, high-performance low dropout (LDO) regulator with an input range of 1.1V to 3.5V. The device supports tracking start-up and shutdown features when the enable pin is connected to the system bus voltage, which simplifies the design process by allowing the designer to easily implement sequencing in multi-rail systems.

Click here for more information on Texas Instruments' TPS51200 DDR termination regulator

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